• Oxford Asylum Cypher AFM
  • Oxford Asylum Cypher AFM
  • Oxford Asylum Cypher AFM

Oxford Asylum Cypher AFM

:

Unmatched mechanical stability— Noise floor is half that of any other AFM sold today!


Exceptionally low drift—Features are undistorted and lattice lines are straight


Lowest noise electronics—No more guessing if periodic features are real or just noise


AM-FM Viscoelastic Mapping Mode

• Tapping mode technique that measures both the

elastic storage modulus, E’, and the viscoelastic

loss tangent, tan δ = E’’/E’

• Good for samples from 50 kPa to 300 GPa

• Fast—line scan rates up to 20 Hz are possible

Contact Resonance

Viscoelastic Mapping Mode

• Contact mode technique that measures both

storage modulus, E’, and loss modulus, E’’

• Good for samples from 1 GPa to 300 GPa

Fast Force Mapping Mode

• Force-distance curve mapping mode that operates

at up to 1000 Hz pixel rate

• Captures every force curve in the image, with

no missing curves or hidden data manipulation

• Captures both deflection and height sensor data

for accurate measurement of both axes

• Real-time and offline analysis models can be

applied to calculate modulus, adhesion and other

properties. Models are fully accessible by users for

verification and modification.

• Good for samples from 10 kPa to 100 GPa


Electrostatic Force Microscopy (EFM)

• Measures electrostatic force gradient

Kelvin Probe Force Microscopy (KPFM)

• Measures sample surface potential and work function

Conductive AFM (CAFM)

• Measures DC current from 1 pA to >10 μA

Fast Current Mapping Mode

• Measures current in Fast Force Mapping Mode

to reduce lateral forces

• Collects complete current vs. Z curves at each pixel

Scanning Microwave Impedance

Microscopy (sMIM)

• Measures both permittivity and conductivity

in contact or Fast Force Mapping Mode

• Operates on insulating, semiconductor

and conductive materials

Piezoresponse Force Microscopy (PFM)

• High sensitivity and crosstalk-free measurements

• Higher sensitivity is enabled by operating at high

voltages (up to ±150 V) and at the tip-sample

contact resonance frequency (DART Mode)

Electrochemical Strain Microscopy (ESM)

• Probe electrochemical reactivity and ionic flows in

energy storage and energy generation materials

• Directly measures effect of ionic currents on

mechanical strain


Please Feel free to give your inquiry in the form below.We will reply you in 24 hours.
HOME Products News Case Factory Show Contact Us About